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KINGSTON 4GB DDR3 LAPTOP MEMORY 1600MHZ

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SKU
KINGSTON 4GB DDR3 LAPTOP MEMORY
LKR0.00
       

4GB DDR3 1600Mhz 

Key Specification

Memory voltage

1.5V

Data integrity check

Non-ECC

Memory Speed

1600MHz

Storage capacity

4GB

Memory type

DRAM

Tech Specefications - KVR16S11S8/4


4GB 1Rx8 512M x 64-Bit PC3-12800
CL11 204-Pin SODIMM
DESCRIPTION
This document describes ValueRAM's 512M x 64-bit (4GB)
DDR3-1600 CL11 SDRAM (Synchronous DRAM) 1Rx8, memory
module, based on eight 512M x 8-bit FBGA components. The
SPD is programmed to JEDEC standard latency DDR3-1600
timing of 11-11-11 at 1.5V. This 204-pin SODIMM uses gold
contact fingers. The electrical and mechanical specifications
are as follows:
FEATURES
• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), double sided component 

More Information
Memory Capacity 4GB
Memory Type DDR3
Memory Speed 1600Mhz (PC3 - 12800)
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KVR16S11S8/4

SPECIFICATIONS:

CL(IDD)  11 cycles
Row Cycle Time (tRCmin) 48.125ns (min.)
Refresh to Active/Refresh 
Command Time (tRFCmin)
260ns (min.)
Row Active Time (tRASmin) 35ns (min.)
Maximum Operating Power 2.100 W*
UL Rating 94 V - 0
Operating Temperature            0C to 85C
Storage Temperature -55 C to +100C
*Power will vary depending on the SDRAM used.